Articles

With respect to the exciton moving in the two-dimensional quantum well, the paper presents a scheme which can rigorously calculate out the binding energy of the exciton in the two-dimensional semiconductor quantum well by simply using the relation <math><semantics> <mrow> <mrow><mo>|</mo> <mrow> <msub> <mi>z</mi> <mi>e</mi> </msub> <mo>&#x2212;</mo><msub> <mi>z</mi> <mi>h</mi> </msub> </mrow> <mo>|</mo></mrow><mo>=</mo><mi>&#x03C1;</mi><mi>tan</mi><mi>&#x03B1;</mi></mrow></semantics></math>, which is much simpler than the complex calculation of Ref.[1-2]. Concerning the calculation result eq.(13), the paper discusses the results for two significant cases of <math><semantics> <mrow> <mrow><mo>|</mo> <mrow> <msub> <mi>z</mi> <mi>e</mi> </msub> <mo>&#x2212;</mo><msub> <mi>z</mi> <mi>h</mi> </msub> </mrow> <mo>|</mo></mrow></mrow></semantics></math><<<math><semantics> <mi>&#x03C1;</mi></semantics></math>and <math><semantics> <mrow> <mrow><mo>|</mo> <mrow> <msub> <mi>z</mi> <mi>e</mi> </msub> <mo>&#x2212;</mo><msub> <mi>z</mi> <mi>h</mi> </msub> </mrow> <mo>|</mo></mrow><mo>&#x2192;</mo><mi>&#x221E;</mi></mrow></semantics></math>.